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ME512 PNP Transistor

The ME512 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the ME512 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The ME512 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the ME512 transistor as follows.

Circuit diagram symbol of the ME512 transistor

ME512 Transistor Specification

Transistor Code ME512
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package TO106
Collector Power Dissipation (Maximum) PC 0.36W
Collector-Base Voltage (Maximum) VCB 50V
Collector-Emitter Voltage (Maximum) VCE 50V
Collector Current (Maximum) IC 0.5A
Operating Junction Temperature (Maximum) TJ 165°C
Emitter-Base Voltage (Maximum) VEB 40V
Forward Current Transfer Ratio (hFE Value) 20
Transition Frequency FT 200MHz
Collector Capacitance CC 13pF

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