ME1001 NPN Transistor

The ME1001 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the ME1001 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The ME1001 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the ME1001 transistor as follows.

ME1001 Transistor Specification

Transistor Code		ME1001
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO106
Collector Power Dissipation (Maximum)	PC	0.25W
Collector-Emitter Voltage (Maximum)	VCE	45V
Operating Junction Temperature (Maximum)	TJ	165°C
Emitter-Base Voltage (Maximum)	VEB	4V
Forward Current Transfer Ratio (hFE Value)		40
Transition Frequency	FT	100MHz
Collector Capacitance	CC	5pF

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