MD2009DFX NPN Transistor

The MD2009DFX is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MD2009DFX transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MD2009DFX transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MD2009DFX transistor as follows.

MD2009DFX Transistor Specification

Transistor Code		MD2009DFX
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3PF
Collector Power Dissipation (Maximum)	PC	58W
Collector-Base Voltage (Maximum)	VCB	1500V
Collector-Emitter Voltage (Maximum)	VCE	700V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		4.5

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