MD2009DFP NPN Transistor

The MD2009DFP is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MD2009DFP transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MD2009DFP transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MD2009DFP transistor as follows.

MD2009DFP Transistor Specification

Transistor Code		MD2009DFP
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO-220FP
Collector Power Dissipation (Maximum)	PC	40W
Collector-Base Voltage (Maximum)	VCB	1500V
Collector-Emitter Voltage (Maximum)	VCE	700V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		5

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