MD1132F NPN Transistor

The MD1132F is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MD1132F transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MD1132F transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MD1132F transistor as follows.

MD1132F Transistor Specification

Transistor Code		MD1132F
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO89
Collector Power Dissipation (Maximum)	PC	0.35W
Collector-Base Voltage (Maximum)	VCB	30V
Collector-Emitter Voltage (Maximum)	VCE	15V
Collector Current (Maximum)	IC	0.05A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		50
Transition Frequency	FT	600MHz
Collector Capacitance	CC	1.7pF

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