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MD1131F NPN Transistor

The MD1131F is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MD1131F transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MD1131F transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MD1131F transistor as follows.

Circuit diagram symbol of the MD1131F transistor

MD1131F Transistor Specification

Transistor Code MD1131F
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO89
Collector Power Dissipation (Maximum) PC 0.35W
Collector-Base Voltage (Maximum) VCB 30V
Collector-Emitter Voltage (Maximum) VCE 15V
Collector Current (Maximum) IC 0.05A
Operating Junction Temperature (Maximum) TJ 200°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 50
Transition Frequency FT 600MHz
Collector Capacitance CC 1.7pF

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