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MBT3904DW1T3G NPN Transistor

The MBT3904DW1T3G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MBT3904DW1T3G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MBT3904DW1T3G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MBT3904DW1T3G transistor as follows.

Circuit diagram symbol of the MBT3904DW1T3G transistor

MBT3904DW1T3G Transistor Specification

Transistor Code MBT3904DW1T3G
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT-363
Transistor SMD Code MA
Collector Power Dissipation (Maximum) PC 0.15W
Collector-Base Voltage (Maximum) VCB 60V
Collector-Emitter Voltage (Maximum) VCE 40V
Collector Current (Maximum) IC 0.2A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 100
Transition Frequency FT 300MHz
Collector Capacitance CC 4pF

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