MBT3904DW1T1G NPN Transistor

The MBT3904DW1T1G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MBT3904DW1T1G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MBT3904DW1T1G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MBT3904DW1T1G transistor as follows.

MBT3904DW1T1G Transistor Specification

Transistor Code		MBT3904DW1T1G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT363
Transistor SMD Code		MA
Collector Power Dissipation (Maximum)	PC	0.15W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	40V
Collector Current (Maximum)	IC	0.2A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		30
Transition Frequency	FT	300MHz
Collector Capacitance	CC	4pF

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