MBT35200MT1G PNP Transistor

The MBT35200MT1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the MBT35200MT1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MBT35200MT1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the MBT35200MT1G transistor as follows.

MBT35200MT1G Transistor Specification

Transistor Code		MBT35200MT1G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT-457
Transistor SMD Code		G4
Collector Power Dissipation (Maximum)	PC	0.625W
Collector-Base Voltage (Maximum)	VCB	55V
Collector-Emitter Voltage (Maximum)	VCE	35V
Collector Current (Maximum)	IC	2A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	100MHz
Collector Capacitance	CC	85pF

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