LMBTH10WT1G NPN Transistor

The LMBTH10WT1G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the LMBTH10WT1G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The LMBTH10WT1G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the LMBTH10WT1G transistor as follows.

LMBTH10WT1G Transistor Specification

Transistor Code		LMBTH10WT1G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SC70
Transistor SMD Code		3E
Collector Power Dissipation (Maximum)	PC	0.15W
Collector-Base Voltage (Maximum)	VCB	30V
Collector-Emitter Voltage (Maximum)	VCE	25V
Collector Current (Maximum)	IC	0.05A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	3V
Forward Current Transfer Ratio (hFE Value)		60
Transition Frequency	FT	650MHz
Collector Capacitance	CC	0.7pF

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