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LMBTA94LT1G PNP Transistor

The LMBTA94LT1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the LMBTA94LT1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The LMBTA94LT1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the LMBTA94LT1G transistor as follows.

Circuit diagram symbol of the LMBTA94LT1G transistor

LMBTA94LT1G Transistor Specification

Transistor Code LMBTA94LT1G
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package SOT23
Transistor SMD Code 4Z
Collector Power Dissipation (Maximum) PC 0.35W
Collector-Base Voltage (Maximum) VCB 400V
Collector-Emitter Voltage (Maximum) VCE 400V
Collector Current (Maximum) IC 0.15A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 75
Collector Capacitance CC 4pF

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