LMBTA56WT1G PNP Transistor

The LMBTA56WT1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the LMBTA56WT1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The LMBTA56WT1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the LMBTA56WT1G transistor as follows.

LMBTA56WT1G Transistor Specification

Transistor Code		LMBTA56WT1G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT-323
Transistor SMD Code		2GM
Collector Power Dissipation (Maximum)	PC	0.15W
Collector-Base Voltage (Maximum)	VCB	80V
Collector-Emitter Voltage (Maximum)	VCE	80V
Collector Current (Maximum)	IC	0.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	4V
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	50MHz

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