LMBT5551DW1T1G NPN Transistor

The LMBT5551DW1T1G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the LMBT5551DW1T1G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The LMBT5551DW1T1G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the LMBT5551DW1T1G transistor as follows.

LMBT5551DW1T1G Transistor Specification

Transistor Code		LMBT5551DW1T1G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SC88
Transistor SMD Code		G1
Collector Power Dissipation (Maximum)	PC	0.225W
Collector-Base Voltage (Maximum)	VCB	160V
Collector-Emitter Voltage (Maximum)	VCE	140V
Collector Current (Maximum)	IC	0.6A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		80

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