LMBT3906DW1T1G PNP Transistor

The LMBT3906DW1T1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the LMBT3906DW1T1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The LMBT3906DW1T1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the LMBT3906DW1T1G transistor as follows.

LMBT3906DW1T1G Transistor Specification

Transistor Code		LMBT3906DW1T1G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT363
Transistor SMD Code		A2
Collector Power Dissipation (Maximum)	PC	0.15W
Collector-Base Voltage (Maximum)	VCB	40V
Collector-Emitter Voltage (Maximum)	VCE	40V
Collector Current (Maximum)	IC	0.2A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	250MHz
Collector Capacitance	CC	4.5pF

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