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LMBT3904WT1G NPN Transistor

The LMBT3904WT1G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the LMBT3904WT1G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The LMBT3904WT1G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the LMBT3904WT1G transistor as follows.

Circuit diagram symbol of the LMBT3904WT1G transistor

LMBT3904WT1G Transistor Specification

Transistor Code LMBT3904WT1G
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT323 SC70
Transistor SMD Code AM
Collector Power Dissipation (Maximum) PC 0.15W
Collector-Base Voltage (Maximum) VCB 60V
Collector-Emitter Voltage (Maximum) VCE 40V
Collector Current (Maximum) IC 0.2A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 100
Transition Frequency FT 300MHz
Collector Capacitance CC 4pF

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More Transistors Datasheets in SOT323_SC70 Package

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