LMBT3904N3T5G NPN Transistor

The LMBT3904N3T5G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the LMBT3904N3T5G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The LMBT3904N3T5G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the LMBT3904N3T5G transistor as follows.

LMBT3904N3T5G Transistor Specification

Transistor Code		LMBT3904N3T5G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT883
Transistor SMD Code		1A
Collector Power Dissipation (Maximum)	PC	0.25W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	40V
Collector Current (Maximum)	IC	0.2A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	300MHz
Collector Capacitance	CC	4pF

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