LMBT2907ADW1T1G PNP Transistor

The LMBT2907ADW1T1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the LMBT2907ADW1T1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The LMBT2907ADW1T1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the LMBT2907ADW1T1G transistor as follows.

LMBT2907ADW1T1G Transistor Specification

Transistor Code		LMBT2907ADW1T1G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SC88
Transistor SMD Code		2F
Collector Power Dissipation (Maximum)	PC	0.225W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	60V
Collector Current (Maximum)	IC	0.6A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	200MHz
Collector Capacitance	CC	8pF

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