LBSS4240LT1G NPN Transistor

The LBSS4240LT1G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the LBSS4240LT1G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The LBSS4240LT1G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the LBSS4240LT1G transistor as follows.

LBSS4240LT1G Transistor Specification

Transistor Code		LBSS4240LT1G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT23
Transistor SMD Code		ZE
Collector Power Dissipation (Maximum)	PC	0.3W
Collector-Base Voltage (Maximum)	VCB	40V
Collector-Emitter Voltage (Maximum)	VCE	40V
Collector Current (Maximum)	IC	2A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		150
Transition Frequency	FT	100MHz
Collector Capacitance	CC	20pF

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