LBC856BWT1G PNP Transistor

The LBC856BWT1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the LBC856BWT1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The LBC856BWT1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the LBC856BWT1G transistor as follows.

LBC856BWT1G Transistor Specification

Transistor Code		LBC856BWT1G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SC70
Transistor SMD Code		3B
Collector Power Dissipation (Maximum)	PC	0.15W
Collector-Base Voltage (Maximum)	VCB	80V
Collector-Emitter Voltage (Maximum)	VCE	65V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		220
Transition Frequency	FT	100MHz
Collector Capacitance	CC	4.5pF

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