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LBC847AWT1G NPN Transistor

The LBC847AWT1G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the LBC847AWT1G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The LBC847AWT1G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the LBC847AWT1G transistor as follows.

Circuit diagram symbol of the LBC847AWT1G transistor

LBC847AWT1G Transistor Specification

Transistor Code LBC847AWT1G
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SC70
Transistor SMD Code 1E
Collector Power Dissipation (Maximum) PC 0.15W
Collector-Base Voltage (Maximum) VCB 50V
Collector-Emitter Voltage (Maximum) VCE 45V
Collector Current (Maximum) IC 0.1A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 110
Transition Frequency FT 100MHz
Collector Capacitance CC 4.5pF

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