LBC817-25DMT1G NPN Transistor

The LBC817-25DMT1G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the LBC817-25DMT1G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The LBC817-25DMT1G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the LBC817-25DMT1G transistor as follows.

LBC817-25DMT1G Transistor Specification

Transistor Code		LBC817-25DMT1G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT-457
Transistor SMD Code		6B
Collector Power Dissipation (Maximum)	PC	0.37W
Collector-Base Voltage (Maximum)	VCB	50V
Collector-Emitter Voltage (Maximum)	VCE	45V
Collector Current (Maximum)	IC	0.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		160
Transition Frequency	FT	100MHz
Collector Capacitance	CC	10pF

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