LBC560AP PNP Transistor

The LBC560AP is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the LBC560AP transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The LBC560AP transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the LBC560AP transistor as follows.

LBC560AP Transistor Specification

Transistor Code		LBC560AP
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO226
Collector Power Dissipation (Maximum)	PC	0.5W
Collector-Base Voltage (Maximum)	VCB	50V
Collector-Emitter Voltage (Maximum)	VCE	45V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		125
Transition Frequency	FT	150MHz
Collector Capacitance	CC	4.5pF

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