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LBC557AP PNP Transistor

The LBC557AP is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the LBC557AP transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The LBC557AP transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the LBC557AP transistor as follows.

Circuit diagram symbol of the LBC557AP transistor

LBC557AP Transistor Specification

Transistor Code LBC557AP
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package TO226
Collector Power Dissipation (Maximum) PC 0.5W
Collector-Base Voltage (Maximum) VCB 50V
Collector-Emitter Voltage (Maximum) VCE 45V
Collector Current (Maximum) IC 0.1A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 125
Transition Frequency FT 75MHz
Collector Capacitance CC 7pF

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More Transistors Datasheets in TO226 Package

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