L2SD2114KVLT1G NPN Transistor

The L2SD2114KVLT1G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the L2SD2114KVLT1G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The L2SD2114KVLT1G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the L2SD2114KVLT1G transistor as follows.

L2SD2114KVLT1G Transistor Specification

Transistor Code		L2SD2114KVLT1G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT23
Transistor SMD Code		BV
Collector Power Dissipation (Maximum)	PC	0.2W
Collector-Base Voltage (Maximum)	VCB	25V
Collector-Emitter Voltage (Maximum)	VCE	20V
Collector Current (Maximum)	IC	0.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	12V
Forward Current Transfer Ratio (hFE Value)		820
Transition Frequency	FT	350MHz
Collector Capacitance	CC	8pF

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