L2SC5658RM3T5G NPN Transistor

The L2SC5658RM3T5G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the L2SC5658RM3T5G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The L2SC5658RM3T5G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the L2SC5658RM3T5G transistor as follows.

L2SC5658RM3T5G Transistor Specification

Transistor Code		L2SC5658RM3T5G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT723
Transistor SMD Code		RM
Collector Power Dissipation (Maximum)	PC	0.26W
Collector-Base Voltage (Maximum)	VCB	50V
Collector-Emitter Voltage (Maximum)	VCE	50V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		180
Transition Frequency	FT	180MHz
Collector Capacitance	CC	2pF

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