L2SC5635WT1G NPN Transistor

The L2SC5635WT1G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the L2SC5635WT1G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The L2SC5635WT1G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the L2SC5635WT1G transistor as follows.

L2SC5635WT1G Transistor Specification

Transistor Code		L2SC5635WT1G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SC70
Transistor SMD Code		HF1
Collector Power Dissipation (Maximum)	PC	0.15W
Collector-Base Voltage (Maximum)	VCB	15V
Collector-Emitter Voltage (Maximum)	VCE	6V
Collector Current (Maximum)	IC	0.05A
Operating Junction Temperature (Maximum)	TJ	125°C
Emitter-Base Voltage (Maximum)	VEB	1.5V
Forward Current Transfer Ratio (hFE Value)		50
Transition Frequency	FT	8000MHz
Collector Capacitance	CC	1pF

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