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L2SC3838QLT1G NPN Transistor

The L2SC3838QLT1G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the L2SC3838QLT1G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The L2SC3838QLT1G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the L2SC3838QLT1G transistor as follows.

Circuit diagram symbol of the L2SC3838QLT1G transistor

L2SC3838QLT1G Transistor Specification

Transistor Code L2SC3838QLT1G
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT-23
Transistor SMD Code APQ
Collector Power Dissipation (Maximum) PC 0.2W
Collector-Base Voltage (Maximum) VCB 20V
Collector-Emitter Voltage (Maximum) VCE 11V
Collector Current (Maximum) IC 0.05A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 3V
Forward Current Transfer Ratio (hFE Value) 120
Transition Frequency FT 1400MHz
Collector Capacitance CC 0.8pF

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