L2SC1623QLT1G NPN Transistor

The L2SC1623QLT1G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the L2SC1623QLT1G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The L2SC1623QLT1G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the L2SC1623QLT1G transistor as follows.

L2SC1623QLT1G Transistor Specification

Transistor Code		L2SC1623QLT1G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT23
Transistor SMD Code		L5
Collector Power Dissipation (Maximum)	PC	0.225W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	50V
Collector Current (Maximum)	IC	0.15A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		120
Transition Frequency	FT	250MHz
Collector Capacitance	CC	3pF

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