L2SB1197KQLT1G PNP Transistor

The L2SB1197KQLT1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the L2SB1197KQLT1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The L2SB1197KQLT1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the L2SB1197KQLT1G transistor as follows.

L2SB1197KQLT1G Transistor Specification

Transistor Code		L2SB1197KQLT1G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT23
Transistor SMD Code		AHQ
Collector Power Dissipation (Maximum)	PC	0.2W
Collector-Base Voltage (Maximum)	VCB	40V
Collector-Emitter Voltage (Maximum)	VCE	32V
Collector Current (Maximum)	IC	0.8A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		120
Transition Frequency	FT	200MHz
Collector Capacitance	CC	12pF

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