L2SA2029RM3T5G PNP Transistor

The L2SA2029RM3T5G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the L2SA2029RM3T5G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The L2SA2029RM3T5G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the L2SA2029RM3T5G transistor as follows.

L2SA2029RM3T5G Transistor Specification

Transistor Code		L2SA2029RM3T5G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT723
Transistor SMD Code		FR
Collector Power Dissipation (Maximum)	PC	0.265W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	50V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		180
Transition Frequency	FT	140MHz
Collector Capacitance	CC	3.5pF

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