L2SA1365FLT1G PNP Transistor

The L2SA1365FLT1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the L2SA1365FLT1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The L2SA1365FLT1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the L2SA1365FLT1G transistor as follows.

L2SA1365FLT1G Transistor Specification

Transistor Code		L2SA1365FLT1G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT23
Transistor SMD Code		AF
Collector Power Dissipation (Maximum)	PC	0.15W
Collector-Base Voltage (Maximum)	VCB	25V
Collector-Emitter Voltage (Maximum)	VCE	20V
Collector Current (Maximum)	IC	0.7A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	4V
Forward Current Transfer Ratio (hFE Value)		150
Transition Frequency	FT	180MHz

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