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KTD8303A9 NPN Transistor

The KTD8303A9 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the KTD8303A9 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The KTD8303A9 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the KTD8303A9 transistor as follows.

Circuit diagram symbol of the KTD8303A9 transistor

KTD8303A9 Transistor Specification

Transistor Code KTD8303A9
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package KT90
Collector Power Dissipation (Maximum) PC 30W
Collector-Base Voltage (Maximum) VCB 200V
Collector-Emitter Voltage (Maximum) VCE 200V
Collector Current (Maximum) IC 12A
Operating Junction Temperature (Maximum) TJ 125°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 1000

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