KTD1824E NPN Transistor

The KTD1824E is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the KTD1824E transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The KTD1824E transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the KTD1824E transistor as follows.

KTD1824E Transistor Specification

Transistor Code		KTD1824E
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		ESM
Collector Power Dissipation (Maximum)	PC	0.1W
Collector-Base Voltage (Maximum)	VCB	50V
Collector-Emitter Voltage (Maximum)	VCE	40V
Collector Current (Maximum)	IC	0.05A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	15V
Forward Current Transfer Ratio (hFE Value)		400
Transition Frequency	FT	120MHz

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