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KTD1003 NPN Transistor

The KTD1003 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the KTD1003 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The KTD1003 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the KTD1003 transistor as follows.

Circuit diagram symbol of the KTD1003 transistor

KTD1003 Transistor Specification

Transistor Code KTD1003
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT-89
Collector Power Dissipation (Maximum) PC 1W
Collector-Base Voltage (Maximum) VCB 60V
Collector-Emitter Voltage (Maximum) VCE 50V
Collector Current (Maximum) IC 1A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 8V
Forward Current Transfer Ratio (hFE Value) 800
Transition Frequency FT 250MHz
Collector Capacitance CC 18pF

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