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KTC812T NPN Transistor

The KTC812T is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the KTC812T transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The KTC812T transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the KTC812T transistor as follows.

Circuit diagram symbol of the KTC812T transistor

KTC812T Transistor Specification

Transistor Code KTC812T
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TS6
Collector Power Dissipation (Maximum) PC 0.9W
Collector-Base Voltage (Maximum) VCB 50V
Collector-Emitter Voltage (Maximum) VCE 20V
Collector Current (Maximum) IC 0.3A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 25V
Forward Current Transfer Ratio (hFE Value) 200
Transition Frequency FT 30MHz
Collector Capacitance CC 4.8pF

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