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KTC802E NPN Transistor

The KTC802E is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the KTC802E transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The KTC802E transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the KTC802E transistor as follows.

Circuit diagram symbol of the KTC802E transistor

KTC802E Transistor Specification

Transistor Code KTC802E
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TES6
Collector Power Dissipation (Maximum) PC 0.2W
Collector-Base Voltage (Maximum) VCB 15V
Collector-Emitter Voltage (Maximum) VCE 12V
Collector Current (Maximum) IC 0.5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 270
Transition Frequency FT 320MHz
Collector Capacitance CC 7.5pF

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More Transistors Datasheets in TES6 Package

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