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KTB817B PNP Transistor

The KTB817B is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the KTB817B transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The KTB817B transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the KTB817B transistor as follows.

Circuit diagram symbol of the KTB817B transistor

KTB817B Transistor Specification

Transistor Code KTB817B
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package TO3P(N)-E
Collector Power Dissipation (Maximum) PC 100W
Collector-Base Voltage (Maximum) VCB 160V
Collector-Emitter Voltage (Maximum) VCE 140V
Collector Current (Maximum) IC 12A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 60
Transition Frequency FT 15MHz
Collector Capacitance CC 300pF

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More Transistors Datasheets in TO3P(N)-E Package

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