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KTA501E PNP Transistor

The KTA501E is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the KTA501E transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The KTA501E transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the KTA501E transistor as follows.

Circuit diagram symbol of the KTA501E transistor

KTA501E Transistor Specification

Transistor Code KTA501E
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package TESV
Collector Power Dissipation (Maximum) PC 0.2W
Collector-Base Voltage (Maximum) VCB 50V
Collector-Emitter Voltage (Maximum) VCE 50V
Collector Current (Maximum) IC 0.15A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 120
Transition Frequency FT 80MHz
Collector Capacitance CC 4pF

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