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KT876V PNP Transistor

The KT876V is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the KT876V transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The KT876V transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the KT876V transistor as follows.

Circuit diagram symbol of the KT876V transistor

KT876V Transistor Specification

Transistor Code KT876V
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Collector Power Dissipation (Maximum) PC 50W
Collector-Base Voltage (Maximum) VCB 50V
Collector-Emitter Voltage (Maximum) VCE 50V
Collector Current (Maximum) IC 10A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 80
Transition Frequency FT 120MHz
Collector Capacitance CC 910pF

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