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KT856B NPN Transistor

The KT856B is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the KT856B transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The KT856B transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the KT856B transistor as follows.

Circuit diagram symbol of the KT856B transistor

KT856B Transistor Specification

Transistor Code KT856B
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Collector Power Dissipation (Maximum) PC 75W
Collector-Base Voltage (Maximum) VCB 700V
Collector-Emitter Voltage (Maximum) VCE 400V
Collector Current (Maximum) IC 10A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 3V
Forward Current Transfer Ratio (hFE Value) 10
Transition Frequency FT 20MHz
Collector Capacitance CC 100pF

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