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KT855B PNP Transistor

The KT855B is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the KT855B transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The KT855B transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the KT855B transistor as follows.

Circuit diagram symbol of the KT855B transistor

KT855B Transistor Specification

Transistor Code KT855B
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Collector Power Dissipation (Maximum) PC 40W
Collector-Base Voltage (Maximum) VCB 250V
Collector Current (Maximum) IC 5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 20
Transition Frequency FT 5MHz
Collector Capacitance CC 200pF

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