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KT850B NPN Transistor

The KT850B is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the KT850B transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The KT850B transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the KT850B transistor as follows.

Circuit diagram symbol of the KT850B transistor

KT850B Transistor Specification

Transistor Code KT850B
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Collector Power Dissipation (Maximum) PC 25W
Collector-Base Voltage (Maximum) VCB 300V
Collector Current (Maximum) IC 2A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 20
Transition Frequency FT 20MHz
Collector Capacitance CC 35pF

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