KT837E1-IM PNP Transistor

The KT837E1-IM is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the KT837E1-IM transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The KT837E1-IM transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the KT837E1-IM transistor as follows.

KT837E1-IM Transistor Specification

Transistor Code		KT837E1-IM
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		KT-92
Collector Power Dissipation (Maximum)	PC	30W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	45V
Collector Current (Maximum)	IC	7.5A
Operating Junction Temperature (Maximum)	TJ	100°C
Emitter-Base Voltage (Maximum)	VEB	15V
Forward Current Transfer Ratio (hFE Value)		50

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More Transistors Datasheets in KT-92 Package

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