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KT825E PNP Transistor

The KT825E is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the KT825E transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The KT825E transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the KT825E transistor as follows.

Circuit diagram symbol of the KT825E transistor

KT825E Transistor Specification

Transistor Code KT825E
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Collector Power Dissipation (Maximum) PC 125W
Collector-Base Voltage (Maximum) VCB 30V
Collector Current (Maximum) IC 20A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 750
Transition Frequency FT 4MHz

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