KT8212A NPN Transistor

The KT8212A is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the KT8212A transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The KT8212A transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the KT8212A transistor as follows.

KT8212A Transistor Specification

Transistor Code		KT8212A
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		KT28-2*
Collector Power Dissipation (Maximum)	PC	65W
Collector-Base Voltage (Maximum)	VCB	100V
Collector-Emitter Voltage (Maximum)	VCE	100V
Collector Current (Maximum)	IC	6A
Operating Junction Temperature (Maximum)	TJ	100°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		15
Transition Frequency	FT	3MHz

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More Transistors Datasheets in KT28-2* Package

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