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KT8176B NPN Transistor

The KT8176B is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the KT8176B transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The KT8176B transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the KT8176B transistor as follows.

Circuit diagram symbol of the KT8176B transistor

KT8176B Transistor Specification

Transistor Code KT8176B
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Collector Power Dissipation (Maximum) PC 40W
Collector-Base Voltage (Maximum) VCB 80V
Collector Current (Maximum) IC 3A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 25
Transition Frequency FT 3MHz

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