KT816G9 PNP Transistor

The KT816G9 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the KT816G9 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The KT816G9 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the KT816G9 transistor as follows.

KT816G9 Transistor Specification

Transistor Code		KT816G9
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		KT-89
Collector Power Dissipation (Maximum)	PC	25W
Collector-Emitter Voltage (Maximum)	VCE	100V
Collector Current (Maximum)	IC	3A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		25
Transition Frequency	FT	3MHz

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