KT815G9 NPN Transistor

The KT815G9 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the KT815G9 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The KT815G9 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the KT815G9 transistor as follows.

KT815G9 Transistor Specification

Transistor Code		KT815G9
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		KT-89
Collector Power Dissipation (Maximum)	PC	10W
Collector-Emitter Voltage (Maximum)	VCE	100V
Collector Current (Maximum)	IC	1.5A
Operating Junction Temperature (Maximum)	TJ	125°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		30
Transition Frequency	FT	40MHz

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