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KT812A NPN Transistor

The KT812A is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the KT812A transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The KT812A transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the KT812A transistor as follows.

Circuit diagram symbol of the KT812A transistor

KT812A Transistor Specification

Transistor Code KT812A
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Collector Power Dissipation (Maximum) PC 50W
Collector-Base Voltage (Maximum) VCB 400V
Collector Current (Maximum) IC 8A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 7V
Forward Current Transfer Ratio (hFE Value) 4
Transition Frequency FT 3MHz
Collector Capacitance CC 100pF

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