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KT8126B1 NPN Transistor

The KT8126B1 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the KT8126B1 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The KT8126B1 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the KT8126B1 transistor as follows.

Circuit diagram symbol of the KT8126B1 transistor

KT8126B1 Transistor Specification

Transistor Code KT8126B1
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package KT28-2
Collector Power Dissipation (Maximum) PC 80W
Collector-Base Voltage (Maximum) VCB 600V
Collector-Emitter Voltage (Maximum) VCE 300V
Collector Current (Maximum) IC 8A
Operating Junction Temperature (Maximum) TJ 100°C
Emitter-Base Voltage (Maximum) VEB 9V
Forward Current Transfer Ratio (hFE Value) 8
Transition Frequency FT 4MHz

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